PDF] Atomically thin MoS₂: a new direct-gap semiconductor. | Semantic Scholar
A new 2D Si3X(X=S, 0) direct band gap semiconductor with anisotropic carrier mobility - ScienceDirect
Nanomaterials | Free Full-Text | Benchmark Investigation of Band-Gap Tunability of Monolayer Semiconductors under Hydrostatic Pressure with Focus-On Antimony | HTML
Atomic–layer–confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides